文献
J-GLOBAL ID:202102285309903878
整理番号:21A0984887
電場サイクル強誘電体Hf_0.5Zr_0.5O_2薄膜における破壊機構への深い洞察:TDDBキャラクタリゼーションと第一原理計算【JST・京大機械翻訳】
Deep Insights into the Failure Mechanisms in Field-cycled Ferroelectric Hf0.5Zr0.5O2 Thin Film: TDDB Characterizations and First-Principles Calculations
著者 (12件):
Wei Wei
(Shandong University,School of Information Science and Engineering,Qingdao,China)
,
Zhang Weiqiang.
(Shandong University,School of Information Science and Engineering,Qingdao,China)
,
Wang Fei
(Shandong University,School of Information Science and Engineering,Qingdao,China)
,
Ma Xiaolei
(Shandong University,School of Information Science and Engineering,Qingdao,China)
,
Wang Qianwen
(Shandong University,School of Information Science and Engineering,Qingdao,China)
,
Sang Pengpeng
(Shandong University,School of Information Science and Engineering,Qingdao,China)
,
Zhan Xuepeng
(Shandong University,School of Information Science and Engineering,Qingdao,China)
,
Li Yuan
(Shandong University,School of Information Science and Engineering,Qingdao,China)
,
Tai Lu
(Shandong University,School of Information Science and Engineering,Qingdao,China)
,
Luo Qing
(Institute of Microelectronics of Chinese Academy of Sciences,Key Laboratory of Microelectronic Devices and Integrated Technology,Beijing,China)
,
Lv Hangbing
(Institute of Microelectronics of Chinese Academy of Sciences,Key Laboratory of Microelectronic Devices and Integrated Technology,Beijing,China)
,
Chen Jiezhi
(Shandong University,School of Information Science and Engineering,Qingdao,China)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2020
号:
IEDM
ページ:
39.6.1-39.6.4
発行年:
2020年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)