文献
J-GLOBAL ID:202102285388652821
整理番号:21A0993176
3LC相変化メモリの記憶密度を改善するための誤り脆弱性パターンを意識した2値データマッピング【JST・京大機械翻訳】
Error-Vulnerable Pattern-Aware Binary-to-Ternary Data Mapping for Improving Storage Density of 3LC Phase Change Memory
著者 (4件):
Hong Jeong Beom
(Department of Semiconductor and Display Engineering, College of Information and Communication Engineering, Sungkyunkwan University, Suwon 16410, Korea)
,
Lee Young Sik
(Department of Electrical and Computer Engineering, College of Information and Communication Engineering, Sungkyunkwan University, Suwon 16410, Korea)
,
Kim Yong Wook
(Department of Electrical and Computer Engineering, College of Information and Communication Engineering, Sungkyunkwan University, Suwon 16410, Korea)
,
Han Tae Hee
(Department of Artificial Intelligence, Sungkyunkwan University, Suwon 16410, Korea)
資料名:
Electronics (Web)
(Electronics (Web))
巻:
9
号:
4
ページ:
626
発行年:
2020年
JST資料番号:
U7178A
ISSN:
2079-9292
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
スイス (CHE)
言語:
英語 (EN)