文献
J-GLOBAL ID:202102288446272057
整理番号:21A0984813
300mm窒化ガリウム-on-Si(111)NMOSトランジスタとシリコンCMOS集積に関する研究の進歩【JST・京大機械翻訳】
Advances in Research on 300mm Gallium Nitride-on-Si(111) NMOS Transistor and Silicon CMOS Integration
著者 (20件):
Wui Then Han
(Components Research)
,
Radosavljevic M.
(Components Research)
,
Desai N.
(Intel Labs)
,
Ehlert R.
(Logic Technology Development)
,
Hadagali V.
(Logic Technology Development)
,
Jun K.
(Components Research)
,
Koirala P.
(Components Research)
,
Minutillo N.
(Logic Technology Development)
,
Kotlyar R.
(Components Research)
,
Oni A.
(CQN)
,
Qayyum M.
(Logic Technology Development)
,
Rode J.
(Logic Technology Development)
,
Sandford J.
(Logic Technology Development)
,
Talukdar T.
(Components Research)
,
Thomas N.
(Components Research)
,
Vora H.
(Logic Technology Development)
,
Wallace P.
(Logic Technology Development)
,
Weiss M.
(Intel Corporation,Advanced Design,Hillsboro,OR,USA,97124)
,
Weng X.
(CQN)
,
Fischer P.
(Components Research)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2020
号:
IEDM
ページ:
27.3.1-27.3.4
発行年:
2020年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)