文献
J-GLOBAL ID:202102289682839999
整理番号:21A0233865
SHJ太陽電池のためのa-Si:Hおよび反応性ITOスパッタリングの不動態化特性の向上【JST・京大機械翻訳】
Enhanced Passivation Properties of a-Si:H and Reactive ITO Sputtering for SHJ Solar Cells
著者 (5件):
Donercark Ergi
(Center for Solar Energy Research and Application (GUeNAM), Middle East Technical University,Ankara,Turkey)
,
Guler Secil
(Center for Solar Energy Research and Application (GUeNAM), Middle East Technical University,Ankara,Turkey)
,
Ciftpinar E. Hande
(Center for Solar Energy Research and Application (GUeNAM), Middle East Technical University,Ankara,Turkey)
,
Kabacelik Ismail
(Center for Solar Energy Research and Application (GUeNAM), Middle East Technical University,Ankara,Turkey)
,
Turan Rasit
(Center for Solar Energy Research and Application (GUeNAM), Middle East Technical University,Ankara,Turkey)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2020
号:
PVSC
ページ:
2308-2312
発行年:
2020年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)