文献
J-GLOBAL ID:202102291452215227
整理番号:21A0003211
GaN上の原子層蒸着Al_2O_3膜の信頼性に及ぼす堆積後アニーリング効果【JST・京大機械翻訳】
Postdeposition annealing effect on the reliability of atomic-layer-deposited Al2O3 films on GaN
著者 (4件):
Horikawa Kiyotaka
(Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555, Japan)
,
Okubo Satoshi
(Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555, Japan)
,
Kawarada Hiroshi
(Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555, Japan)
,
Hiraiwa Atsushi
(Research Organization for Nano and Life Innovation, Waseda University, 513 Waseda-tsurumaki, Shinjuku, Tokyo 162-0041, Japan)
資料名:
Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
(Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena)
巻:
38
号:
6
ページ:
062207-062207-14
発行年:
2020年
JST資料番号:
E0974A
ISSN:
2166-2746
CODEN:
JVTBD9
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)