文献
J-GLOBAL ID:202102291646136704
整理番号:21A0013202
In-situ CVDエピタクシーを用いた表面Gaブーストほう素ドープSi_0.5Geo_0.5:1.1±10≦21cm-3活性ドーピング濃度および5.7≦10-10Ω-cmν=2接触抵抗率の達成【JST・京大機械翻訳】
Surface Ga-boosted Boron-doped $¥mathrm{Si}_{0.5}¥mathrm{Geo}_{0.5}$ using In-situ CVD Epitaxy: Achieving $1.1 ¥times 10^{21}¥mathrm{cm}^{-3}$ Active Doping Concentration and $5.7¥times 10^{-10}¥Omega-¥mathrm{cm}^{2}$ Contact Resistivity
著者 (12件):
Xu Haiwen
(National University of Singapore (NUS),Department of Electrical and Computer Engineering,Singapore,117576)
,
Zhang Jishen
(National University of Singapore (NUS),Department of Electrical and Computer Engineering,Singapore,117576)
,
Lima Lucas P B
(ASM, Belgium,Leuven,Belgium,3001)
,
Margetis Joe
(ASM, America,Phoenix,AZ,USA,85034)
,
Khazaka Rami
(ASM, Belgium,Leuven,Belgium,3001)
,
Xie Qi
(ASM, Belgium,Leuven,Belgium,3001)
,
Tolle John
(ASM, America,Phoenix,AZ,USA,85034)
,
Wang Chengkuan
(National University of Singapore (NUS),Department of Electrical and Computer Engineering,Singapore,117576)
,
Wang Haibo
(National University of Singapore (NUS),Department of Electrical and Computer Engineering,Singapore,117576)
,
Zhou Zuopu
(National University of Singapore (NUS),Department of Electrical and Computer Engineering,Singapore,117576)
,
Kong Qiwen
(National University of Singapore (NUS),Department of Electrical and Computer Engineering,Singapore,117576)
,
Gong Xiao
(National University of Singapore (NUS),Department of Electrical and Computer Engineering,Singapore,117576)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2020
号:
VLSI Technology
ページ:
1-2
発行年:
2020年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)