文献
J-GLOBAL ID:202102293904517114
整理番号:21A2171487
単一源前駆体としてビス(イソブチルジチオホスフィナト)鉛(II)錯体を用いたAACVD技術によるナノ構造硫化鉛堆積とそのインピーダンス研究【JST・京大機械翻訳】
Nanostructured Lead Sulphide Depositions by AACVD Technique Using Bis(Isobutyldithiophosphinato)Lead(II) Complex as Single Source Precursor and Its Impedance Study
著者 (8件):
Iram Sadia
(School of Natural Sciences, National University of Sciences and Technology, Islamabad 44000, Pakistan)
,
Iram Sadia
(Department of Materials, University of Manchester, Manchester M13 9PL, UK)
,
Mahmood Azhar
(School of Natural Sciences, National University of Sciences and Technology, Islamabad 44000, Pakistan)
,
Sitara Effat
(School of Natural Sciences, National University of Sciences and Technology, Islamabad 44000, Pakistan)
,
Bukhari Syeda Aqsa Batool
(School of Natural Sciences, National University of Sciences and Technology, Islamabad 44000, Pakistan)
,
Fatima Syeda Arooj
(Physics Division, Pakistan Institute of Nuclear Science and Technology (Pinstech), P.O. Nilore, Islamabad 45500, Pakistan)
,
Shaheen Rubina
(Physics Division, Pakistan Institute of Nuclear Science and Technology (Pinstech), P.O. Nilore, Islamabad 45500, Pakistan)
,
Malik Mohammad Azad
(Department of Materials, University of Manchester, Manchester M13 9PL, UK)
資料名:
Nanomaterials (Web)
(Nanomaterials (Web))
巻:
10
号:
8
ページ:
1438
発行年:
2020年
JST資料番号:
U7252A
ISSN:
2079-4991
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
スイス (CHE)
言語:
英語 (EN)