文献
J-GLOBAL ID:202102297510922945
整理番号:21A0518317
高応答性,自己出力光検出器のためのGaAs-WSe_2(1D-2D)vdWsヘテロ接合のゲート調整可能な界面特性【JST・京大機械翻訳】
Gate-tunable the interface properties of GaAs-WSe2 (1D-2D) vdWs heterojunction for high-responsivity, self-powered photodetector
著者 (10件):
Chen Xue
(State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China)
,
Jiang Bei
(School of Physics and Technology, Wuhan University, Wuhan 430072, China)
,
Wang Dengkui
(State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China)
,
Li Guoli
(Key Laboratory for Micro/Nano-Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China)
,
Wang Hailu
(State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China)
,
Wang Hao
(State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China)
,
Wang Fang
(State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China)
,
Wang Peng
(State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China)
,
Liao Lei
(School of Physics and Technology, Wuhan University, Wuhan 430072, China)
,
Wei Zhipeng
(State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
118
号:
4
ページ:
041102-041102-6
発行年:
2021年
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)