文献
J-GLOBAL ID:202202210534208192
整理番号:22A0578385
ピエゾ-フォトトロニクス効果によるAu/GaN界面を横切るプラズモンホットエレクトロンの増強された移動効率【JST・京大機械翻訳】
Enhanced transfer efficiency of plasmonic hot-electron across Au/GaN interface by the piezo-phototronic effect
著者 (8件):
Zhu Yu
(School of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, China)
,
Deng Congcong
(School of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, China)
,
He Chenguang
(Institute of Semiconductors, Guangdong Academy of Sciences, Guangzhou 510650, China)
,
Zhao Wei
(Institute of Semiconductors, Guangdong Academy of Sciences, Guangzhou 510650, China)
,
Chen Zhitao
(Institute of Semiconductors, Guangdong Academy of Sciences, Guangzhou 510650, China)
,
Li Shuti
(School of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, China)
,
Zhang Kang
(Institute of Semiconductors, Guangdong Academy of Sciences, Guangzhou 510650, China)
,
Wang Xingfu
(School of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, China)
資料名:
Nano Energy
(Nano Energy)
巻:
93
ページ:
Null
発行年:
2022年
JST資料番号:
W3116A
ISSN:
2211-2855
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)