文献
J-GLOBAL ID:202202211971597337
整理番号:22A0829740
HfO_2のElectronビーム誘起官能化による部位特異的調節メモリスタ【JST・京大機械翻訳】
Site-Specific Regulated Memristors via Electron-Beam-Induced Functionalization of HfO2
著者 (7件):
Kumar Mohit
(Department of Energy Systems Research, Ajou University, Suwon, 16499, Republic of Korea)
,
Kumar Mohit
(Department of Materials Science and Engineering, Ajou University, Suwon, 16499, Republic of Korea)
,
Ahn Yeong Hwan
(Department of Energy Systems Research, Ajou University, Suwon, 16499, Republic of Korea)
,
Iqbal Shahid
(Department of Energy Systems Research, Ajou University, Suwon, 16499, Republic of Korea)
,
Kim Unjeong
(Department of Energy Systems Research, Ajou University, Suwon, 16499, Republic of Korea)
,
Seo Hyungtak
(Department of Energy Systems Research, Ajou University, Suwon, 16499, Republic of Korea)
,
Seo Hyungtak
(Department of Materials Science and Engineering, Ajou University, Suwon, 16499, Republic of Korea)
資料名:
Small
(Small)
巻:
18
号:
8
ページ:
e2105585
発行年:
2022年
JST資料番号:
W2348A
ISSN:
1613-6810
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)