文献
J-GLOBAL ID:202202213253298955
整理番号:22A0901224
高κベースInP金属-オキシド-半導体デバイスの電気的性質に及ぼすフッ素プラズマ前処理の効果【JST・京大機械翻訳】
Effects of fluorine plasma pre-treatment on electrical properties of high-κ-based InP metal-oxide-semiconductor device
著者 (6件):
Xu Qian
(School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, China)
,
Liu Wei-Dong
(School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, China)
,
Ding Yao-Xin
(School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, China)
,
Zheng Zhi-Wei
(School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, China)
,
Ying Lei-Ying
(School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, China)
,
Zhang Bao-Ping
(School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, China)
資料名:
Applied Surface Science
(Applied Surface Science)
巻:
585
ページ:
Null
発行年:
2022年
JST資料番号:
B0707B
ISSN:
0169-4332
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)