文献
J-GLOBAL ID:202202214250739652
整理番号:22A0630316
エッジ終端のない1GW/cm2垂直Ga_2O_3Schottky障壁ダイオード【JST・京大機械翻訳】
Over 1 GW/cm2 Vertical Ga2O3 Schottky Barrier Diodes Without Edge Termination
著者 (13件):
He Qiming
(School of Electronic and Information Engineering, Beihang University, Beijing, China)
,
Hao Weibing
(School of Microelectronics, USTC, Hefei, China)
,
Zhou Xuanze
(School of Microelectronics, USTC, Hefei, China)
,
Li Yu
(NRSL, USTC, Hefei, China)
,
Zhou Kai
(School of Microelectronics, USTC, Hefei, China)
,
Chen Chen
(School of Microelectronics, USTC, Hefei, China)
,
Xiong Wenhao
(School of Microelectronics, USTC, Hefei, China)
,
Jian Guangzhong
(School of Microelectronics, USTC, Hefei, China)
,
Xu Guangwei
(School of Microelectronics, USTC, Hefei, China)
,
Zhao Xiaolong
(School of Microelectronics, USTC, Hefei, China)
,
Wu Xiaojun
(School of Electronic and Information Engineering, Beihang University, Beijing, China)
,
Zhu Junfa
(NRSL, USTC, Hefei, China)
,
Long Shibing
(School of Microelectronics, USTC, Hefei, China)
資料名:
IEEE Electron Device Letters
(IEEE Electron Device Letters)
巻:
43
号:
2
ページ:
264-267
発行年:
2022年
JST資料番号:
B0344B
ISSN:
0741-3106
CODEN:
EDLEDZ
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)