文献
J-GLOBAL ID:202202215276572149
整理番号:22A0551523
2Dナノ材料電界効果トランジスタセンサの分子工学:革新スペクトルを横切る基礎と翻訳【JST・京大機械翻訳】
Molecular Engineering of 2D Nanomaterial Field-Effect Transistor Sensors: Fundamentals and Translation across the Innovation Spectrum
著者 (6件):
Chen Junhong
(Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL, 60637, USA)
,
Chen Junhong
(Chemical Sciences and Engineering Division, Physical Sciences and Engineering Directorate, Argonne National Laboratory, Lemont, IL, 60439, USA)
,
Pu Haihui
(Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL, 60637, USA)
,
Pu Haihui
(Chemical Sciences and Engineering Division, Physical Sciences and Engineering Directorate, Argonne National Laboratory, Lemont, IL, 60439, USA)
,
Hersam Mark C.
(Department of Materials Science and Engineering and Department of Chemistry, Northwestern University, Evanston, IL, 60208, USA)
,
Westerhoff Paul
(School of Sustainable Engineering and The Built Environment, Arizona State University, Tempe, AZ, 85287, USA)
資料名:
Advanced Materials
(Advanced Materials)
巻:
34
号:
3
ページ:
e2106975
発行年:
2022年
JST資料番号:
W0001A
ISSN:
0935-9648
CODEN:
ADVMEW
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)