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J-GLOBAL ID：202202217509426078
整理番号：22A0956006
300°C高温応用のための28nm UTBB FDSOIにおける温度と小さいサブ閾値勾配による低閾値電圧シフト【JST・京大機械翻訳】
The low threshold-voltage shift with temperature and small subthreshold-slope in 28 nm UTBB FDSOI for 300 °C high-temperature application
Zhao S S
(University of Chinese Academy of Sciences, Beijing 100049, People’s Republic of China)
,
Zhao S S
(Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People’s Republic of China)
,
Zhao S S
(Key Laboratory of Science and Technology on Silicon Devices, Chinese Academy of Sciences, Beijing 100029, People’s Republic of China)
,
Gao L C
(Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People’s Republic of China)
,
Gao L C
(Key Laboratory of Science and Technology on Silicon Devices, Chinese Academy of Sciences, Beijing 100029, People’s Republic of China)
,
Li X J
(Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People’s Republic of China)
,
Li X J
(Key Laboratory of Science and Technology on Silicon Devices, Chinese Academy of Sciences, Beijing 100029, People’s Republic of China)
,
Zhang H Y
(University of Chinese Academy of Sciences, Beijing 100049, People’s Republic of China)
,
Zhang H Y
(Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People’s Republic of China)
,
Zhang H Y
(Key Laboratory of Science and Technology on Silicon Devices, Chinese Academy of Sciences, Beijing 100029, People’s Republic of China)
,
Ni T
(Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People’s Republic of China)
,
Ni T
(Key Laboratory of Science and Technology on Silicon Devices, Chinese Academy of Sciences, Beijing 100029, People’s Republic of China)
,
Wang J J
(Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People’s Republic of China)
,
Wang J J
(Key Laboratory of Science and Technology on Silicon Devices, Chinese Academy of Sciences, Beijing 100029, People’s Republic of China)
,
Gao J T
(Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People’s Republic of China)
,
Gao J T
(Key Laboratory of Science and Technology on Silicon Devices, Chinese Academy of Sciences, Beijing 100029, People’s Republic of China)
,
Bu J H
(Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People’s Republic of China)
,
Bu J H
(Key Laboratory of Science and Technology on Silicon Devices, Chinese Academy of Sciences, Beijing 100029, People’s Republic of China)
,
Li D L
(Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People’s Republic of China)
,
Li D L
(Key Laboratory of Science and Technology on Silicon Devices, Chinese Academy of Sciences, Beijing 100029, People’s Republic of China)
,
Yan W W
(Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People’s Republic of China)
,
Yan W W
(Key Laboratory of Science and Technology on Silicon Devices, Chinese Academy of Sciences, Beijing 100029, People’s Republic of China)
,
Zeng C B
(Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People’s Republic of China)
,
Zeng C B
(Key Laboratory of Science and Technology on Silicon Devices, Chinese Academy of Sciences, Beijing 100029, People’s Republic of China)
,
Wang Z J
(University of Chinese Academy of Sciences, Beijing 100049, People’s Republic of China)
,
Wang Z J
(Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People’s Republic of China)
,
Zhao F Z
(Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People’s Republic of China)
,
Zhao F Z
(Key Laboratory of Science and Technology on Silicon Devices, Chinese Academy of Sciences, Beijing 100029, People’s Republic of China)
,
Luo J J
(Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People’s Republic of China)
,
Luo J J
(Key Laboratory of Science and Technology on Silicon Devices, Chinese Academy of Sciences, Beijing 100029, People’s Republic of China)
,
Han Z S
(University of Chinese Academy of Sciences, Beijing 100049, People’s Republic of China)
,
Han Z S
(Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People’s Republic of China)
,
Han Z S
(Key Laboratory of Science and Technology on Silicon Devices, Chinese Academy of Sciences, Beijing 100029, People’s Republic of China)
資料名：
Journal of Physics. D. Applied Physics
(Journal of Physics. D. Applied Physics)
巻： 55 号： 22 ページ： 225104 (8pp) 発行年： 2022年
JST資料番号： B0092B ISSN： 0022-3727 CODEN： JPAPBE 資料種別： 逐次刊行物 (A)
記事区分： 原著論文 発行国： イギリス (GBR) 言語： 英語 (EN)
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