文献
J-GLOBAL ID:202202217736025956
整理番号:22A0433568
短期記憶効果を持つZnOベースメモリスタの人工シナプス特性【JST・京大機械翻訳】
Artificial synapse characteristics of a ZnO-based memristor with a short-term memory effect
著者 (4件):
Yun Seokyeon
(Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea)
,
Mahata Chandreswar
(Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea)
,
Kim Min-Hwi
(Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul 08826, South Korea)
,
Kim Sungjun
(Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea)
資料名:
Applied Surface Science
(Applied Surface Science)
巻:
579
ページ:
Null
発行年:
2022年
JST資料番号:
B0707B
ISSN:
0169-4332
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)