文献
J-GLOBAL ID:202202219447552075
整理番号:22A0695700
高出力単一モード1300nm超格子ベースVCSEL:埋め込みトンネル接合直径が性能に及ぼす影響【JST・京大機械翻訳】
High Power Single Mode 1300-nm Superlattice Based VCSEL: Impact of the Buried Tunnel Junction Diameter on Performance
著者 (15件):
Blokhin Sergey A.
(Ioffe Institute, Saint Petersburg, Russia)
,
Babichev Andrey V.
(ITMO University, Saint Petersburg, Russia)
,
Gladyshev Andrey G.
(Connector Optics LLC, Saint Petersburg, Russia)
,
Karachinsky Leonid Ya.
(ITMO University, Saint Petersburg, Russia)
,
Novikov Innokenty I.
(ITMO University, Saint Petersburg, Russia)
,
Blokhin Alexey A.
(Ioffe Institute, Saint Petersburg, Russia)
,
Bobrov Mikhail A.
(Ioffe Institute, Saint Petersburg, Russia)
,
Maleev Nikolay A.
(Ioffe Institute, Saint Petersburg, Russia)
,
Andryushkin Vladislav V.
(ITMO University, Saint Petersburg, Russia)
,
Denisov Dmitrii V.
(Saint Petersburg Electrotechnical University “LETI,”, Saint Petersburg, Russia)
,
Voropaev Kirill O.
(JSC OKB-Planeta, Veliky Novgorod, Russia)
,
Zhumaeva Irina O.
(JSC OKB-Planeta, Veliky Novgorod, Russia)
,
Ustinov Victor M.
(Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences (RAS), Saint Petersburg, Russia)
,
Egorov Anton Yu.
(Alferov University, Saint Petersburg, Russia)
,
Ledentsov Nikolay N.
(VI Systems GmbH, Berlin, Germany)
資料名:
IEEE Journal of Quantum Electronics
(IEEE Journal of Quantum Electronics)
巻:
58
号:
2
ページ:
ROMBUNNO.2400115.1-15
発行年:
2022年
JST資料番号:
H0432A
ISSN:
0018-9197
CODEN:
IEJQA7
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)