文献
J-GLOBAL ID:202202219779982670
整理番号:22A0958737
線量測定応用のためのNANDフラッシュメモリの解析的ビット誤りモデル【JST・京大機械翻訳】
Analytical Bit-Error Model of NAND Flash Memories for Dosimetry Application
著者 (6件):
Kumari Preeti
(Department of Electrical and Computer Engineering, The University of Alabama in Huntsville, Huntsville, AL, USA)
,
Surendranathan Umeshwarnath
(Department of Electrical and Computer Engineering, The University of Alabama in Huntsville, Huntsville, AL, USA)
,
Wasiolek Maryla
(Sandia National Laboratories, Albuquerque, NM, USA)
,
Hattar Khalid
(Sandia National Laboratories, Albuquerque, NM, USA)
,
Bhat Narayana
(Center for Space Plasma and Aeronomic Research, The University of Alabama in Huntsville, Huntsville, AL, USA)
,
Ray Biswajit
(Department of Electrical and Computer Engineering, The University of Alabama in Huntsville, Huntsville, AL, USA)
資料名:
IEEE Transactions on Nuclear Science
(IEEE Transactions on Nuclear Science)
巻:
69
号:
3
ページ:
478-484
発行年:
2022年
JST資料番号:
C0235A
ISSN:
0018-9499
CODEN:
IETNAE
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)