文献
J-GLOBAL ID:202202219979012179
整理番号:22A0629206
安定なシリコンアノードのための自己適応電気化学研削戦略【JST・京大機械翻訳】
Self-Adapting Electrochemical Grinding Strategy for Stable Silicon Anode
著者 (9件):
Wang Haozheng
(Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China)
,
Man Han
(Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China)
,
Yang Jinghao
(Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China)
,
Zang Jiahe
(Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China)
,
Che Renchao
(Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China)
,
Wang Fei
(Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China)
,
Sun Dalin
(Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China)
,
Fang Fang
(Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China)
,
Fang Fang
(Yiwu Research Institute of Fudan University, Yiwu City, Zhejiang, 322000, P. R. China)
資料名:
Advanced Functional Materials
(Advanced Functional Materials)
巻:
32
号:
6
ページ:
e2109887
発行年:
2022年
JST資料番号:
W1336A
ISSN:
1616-301X
CODEN:
AFMDC6
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)