文献
J-GLOBAL ID:202202226513385952
整理番号:22A0973974
多段階成長過程でMOCVDによりc面サファイア上に成長させたε-Ga_2O_3【JST・京大機械翻訳】
ε-Ga2O3 Grown on c-Plane Sapphire by MOCVD with a Multistep Growth Process
著者 (8件):
Hsu Yu-Hsuan
(Department of Photonics, National Yang Ming Chiao Tung University, Taiwan, ROC)
,
Wu Wan-Yu
(Department of Biomedical Engineering, Da-Yeh University, Taiwan, ROC)
,
Lin Kun-Lin
(Taiwan Semiconductor Research Institute (TSRI), National Applied Research Laboratories, Taiwan, ROC)
,
Chen Yu-Hsuan
(Graduate Institute of Precision Engineering, National Chung Hsing University, Taiwan, ROC)
,
Lin Yi-Hsin
(Department of Photonics, National Yang Ming Chiao Tung University, Taiwan, ROC)
,
Liu Po-Liang
(Graduate Institute of Precision Engineering, National Chung Hsing University, Taiwan, ROC)
,
Hsiao Ching-Lien
(Thin Film Physics Division, Department of Physics, Chemistry, and Biology, Linkoeping University, Sweden)
,
Horng Ray-Hua
(Institute of Electronics, National Yang Ming Chiao Tung University, Taiwan, ROC)
資料名:
Crystal Growth & Design
(Crystal Growth & Design)
巻:
22
号:
3
ページ:
1837-1845
発行年:
2022年
JST資料番号:
W1323A
ISSN:
1528-7483
CODEN:
CGDEFU
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)