文献
J-GLOBAL ID:202202226636088630
整理番号:22A0704666
接触レッジ構造を持つ再成長Ohm接触による低電圧RF応用のための高性能ミリ波InAlN/GaN HEMT【JST・京大機械翻訳】
High performance millimeter-wave InAlN/GaN HEMT for low voltage RF applications via regrown Ohmic contact with contact ledge structure
著者 (13件):
Zhou Yuwei
(School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, China)
,
Mi Minhan
(School of Microelectronics, Xidian University, Xi’an 710071, China)
,
Yang Mei
(School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, China)
,
Han Yutong
(School of Microelectronics, Xidian University, Xi’an 710071, China)
,
Wang Pengfei
(School of Microelectronics, Xidian University, Xi’an 710071, China)
,
Chen Yilin
(School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, China)
,
Liu Jielong
(School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, China)
,
Gong Can
(School of Microelectronics, Xidian University, Xi’an 710071, China)
,
Lu Yiwei
(School of Microelectronics, Xidian University, Xi’an 710071, China)
,
Zhang Meng
(School of Microelectronics, Xidian University, Xi’an 710071, China)
,
Zhu Qing
(School of Microelectronics, Xidian University, Xi’an 710071, China)
,
Ma Xiaohua
(School of Microelectronics, Xidian University, Xi’an 710071, China)
,
Hao Yue
(School of Microelectronics, Xidian University, Xi’an 710071, China)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
120
号:
6
ページ:
062104-062104-7
発行年:
2022年
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)