文献
J-GLOBAL ID:202202230304964038
整理番号:22A0909116
極端に低い漏れ電流と2.55kVの高ブロッキング電圧を有するAlGaNチャネルSchottky障壁ダイオードの電流輸送機構【JST・京大機械翻訳】
Current transport mechanism of AlGaN-channel Schottky barrier diode with extremely low leakage current and high blocking voltage of 2.55 kV
著者 (11件):
Zhang Tao
(Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, People’s Republic of China)
,
Zhang Yanni
(Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, People’s Republic of China)
,
Li Ruohan
(Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, People’s Republic of China)
,
Lu Juan
(Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, People’s Republic of China)
,
Su Huake
(Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, People’s Republic of China)
,
Xu Shengrui
(Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, People’s Republic of China)
,
Su Kai
(Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, People’s Republic of China)
,
Duan Xiaoling
(Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, People’s Republic of China)
,
Lv Yueguang
(School of Aerospace Science and Technology, Xidian University, Xi’an 710071, People’s Republic of China)
,
Zhang Jincheng
(Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, People’s Republic of China)
,
Hao Yue
(Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, People’s Republic of China)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
120
号:
9
ページ:
092102-092102-5
発行年:
2022年
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)