文献
J-GLOBAL ID:202202231092048706
整理番号:22A0752564
高荷電シリコンイオンの電子衝撃励起と二電子再結合速度係数の計算【JST・京大機械翻訳】
Calculations of electron-impact excitation and dielectronic recombination rate coefficients of highly charged silicon ions
著者 (5件):
Xie L. Y.
(Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, People’s Republic of China)
,
Rui J. L.
(Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, People’s Republic of China)
,
Zhang J. M.
(Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, People’s Republic of China)
,
Schuch R.
(Department of Physics, Stockholm University, AlbaNova University Center, SE-10691 Stockholm, Sweden)
,
Dong C. Z.
(Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, People’s Republic of China)
資料名:
Physical Review. A
(Physical Review. A)
巻:
105
号:
1
ページ:
012823
発行年:
2022年
JST資料番号:
D0323D
ISSN:
2469-9926
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)