文献
J-GLOBAL ID:202202232626729048
整理番号:22A0807777
臨界層厚を超えたパターン形成GaN上の亀裂のない高アルミニウムモル分率AlGaNの実現【JST・京大機械翻訳】
Realizing crack-free high-aluminum-mole-fraction AlGaN on patterned GaN beyond the critical layer thickness
著者 (8件):
Mehnke Frank
(School of Electrical and Computer Engineering, Georgia Institute of Technology, Center for Compound Semiconductors, 777 Atlantic Drive, Atlanta, Georgia 30332, USA)
,
Fischer Alec M.
(Department of Physics and Bateman Physical Science, Arizona State University, F-Wing (PSF470), Tempe, Arizona 85287, USA)
,
Xu Zhiyu
(School of Electrical and Computer Engineering, Georgia Institute of Technology, Center for Compound Semiconductors, 777 Atlantic Drive, Atlanta, Georgia 30332, USA)
,
Bouchard Henri
(School of Electrical and Computer Engineering, Georgia Institute of Technology, Center for Compound Semiconductors, 777 Atlantic Drive, Atlanta, Georgia 30332, USA)
,
Detchprohm Theeradetch
(School of Electrical and Computer Engineering, Georgia Institute of Technology, Center for Compound Semiconductors, 777 Atlantic Drive, Atlanta, Georgia 30332, USA)
,
Shen Shyh-Chiang
(School of Electrical and Computer Engineering, Georgia Institute of Technology, Center for Compound Semiconductors, 777 Atlantic Drive, Atlanta, Georgia 30332, USA)
,
Ponce Fernando A.
(Department of Physics and Bateman Physical Science, Arizona State University, F-Wing (PSF470), Tempe, Arizona 85287, USA)
,
Dupuis Russell D.
(School of Electrical and Computer Engineering, Georgia Institute of Technology, Center for Compound Semiconductors, 777 Atlantic Drive, Atlanta, Georgia 30332, USA)
資料名:
Journal of Applied Physics
(Journal of Applied Physics)
巻:
131
号:
7
ページ:
073103-073103-10
発行年:
2022年
JST資料番号:
C0266A
ISSN:
0021-8979
CODEN:
JAPIAU
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)