文献
J-GLOBAL ID:202202233265781469
整理番号:22A0629183
銅-銀-ビスマス-ハロゲン化物半導体における構造,電荷キャリア局在および動力学の相互作用【JST・京大機械翻訳】
Interplay of Structure, Charge-Carrier Localization and Dynamics in Copper-Silver-Bismuth-Halide Semiconductors
著者 (8件):
Buizza Leonardo R. V.
(Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, Oxford, OX1 3PU, UK)
,
Sansom Harry C.
(Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, Oxford, OX1 3PU, UK)
,
Wright Adam D.
(Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, Oxford, OX1 3PU, UK)
,
Ulatowski Aleksander M.
(Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, Oxford, OX1 3PU, UK)
,
Johnston Michael B.
(Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, Oxford, OX1 3PU, UK)
,
Snaith Henry J.
(Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, Oxford, OX1 3PU, UK)
,
Herz Laura M.
(Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, Oxford, OX1 3PU, UK)
,
Herz Laura M.
(TUM Institute for Advanced Study, Technische Universitaet Muenchen, Lichtenbergstrasse 2a, 85748, Garching bei Muenchen, Germany)
資料名:
Advanced Functional Materials
(Advanced Functional Materials)
巻:
32
号:
6
ページ:
e2108392
発行年:
2022年
JST資料番号:
W1336A
ISSN:
1616-301X
CODEN:
AFMDC6
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)