文献
J-GLOBAL ID:202202233824893093
整理番号:22A0974997
横方向ペンタセン/a-IGZOPN接合に基づく電力効率の良いガスセンシングとシナプスダイオード【JST・京大機械翻訳】
Power-Efficient Gas-Sensing and Synaptic Diodes Based on Lateral Pentacene/a-IGZO PN Junctions
著者 (7件):
Chu Yingli
(College of Chemistry and Environmental Engineering, Shenzhen University, China)
,
Chu Yingli
(College of Physics and Optoelectronic Engineering, Shenzhen University, China)
,
Tan Haotian
(State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, China)
,
Zhao Chenyang
(College of Chemistry and Environmental Engineering, Shenzhen University, China)
,
Wu Xiaohan
(State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, China)
,
Ding Shi-Jin
(State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, China)
,
Ding Shi-Jin
(National Integrated Circuit Innovation Center, China)
資料名:
ACS Applied Materials & Interfaces
(ACS Applied Materials & Interfaces)
巻:
14
号:
7
ページ:
9368-9376
発行年:
2022年
JST資料番号:
W2329A
ISSN:
1944-8244
CODEN:
AAMICK
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)