文献
J-GLOBAL ID:202202236400895952
整理番号:22A1086165
In_2O_3系抵抗型ガスセンサにおけるH_2Sセンシングと低周波雑音特性に及ぼす電極構造の影響【JST・京大機械翻訳】
Effects of Electrode Structure on H2S Sensing and Low-Frequency Noise Characteristics in In2O3-Based Resistor-Type Gas Sensors
著者 (7件):
Kim Donghee
(Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul, South Korea)
,
Shin Wonjun
(Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul, South Korea)
,
Hong Seongbin
(Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul, South Korea)
,
Jeong Yujeong
(Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul, South Korea)
,
Jung Gyuweon
(Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul, South Korea)
,
Park Jinwoo
(Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul, South Korea)
,
Lee Jong-Ho
(Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul, South Korea)
資料名:
IEEE Sensors Journal
(IEEE Sensors Journal)
巻:
22
号:
7
ページ:
6311-6320
発行年:
2022年
JST資料番号:
W1318A
ISSN:
1530-437X
CODEN:
ISJEAZ
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)