文献
J-GLOBAL ID:202202237101454065
整理番号:22A1175433
真空金属酸化物半導体電界効果トランジスタによる積層酸化物無接合高Kの数値研究【JST・京大機械翻訳】
A Numerical Investigation of Stacked Oxide Junctionless High K with Vaccum Metal Oxide Semiconductor Field Effect Transistor
著者 (4件):
Darwin S.
(Department of Electronics and Communication Engineering, Dr.Sivanthi Aditanar College of Engineering, Tiruchendur, Tamilnadu, India)
,
Rega A.
(Department of Electronics and Communication Engineering, Dr.Sivanthi Aditanar College of Engineering, Tiruchendur, Tamilnadu, India)
,
Samuel T. S. Arun
(Department of Electronics and Communication Engineering, National Engineering College, Kovilpatti, Tamilnadu, India)
,
Vimala P.
(Department of Electronics and Communication Engineering, Dayananda Sagar College of Engineering, Bangalore, Karnataka, India)
資料名:
Silicon
(Silicon)
巻:
14
号:
6
ページ:
2647-2654
発行年:
2022年
JST資料番号:
W4947A
ISSN:
1876-9918
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)