文献
J-GLOBAL ID:202202237495129879
整理番号:22A0107589
β-In_2Se_3/Siヘテロ接合に基づく高速広帯域スペクトル光検出器【JST・京大機械翻訳】
High-speed and broadband spectral photodetectors based on β-In2Se3/Si heterojunction
著者 (9件):
Guo Huier
(School of Materials Science and Engineering, Hefei University of Technology, Hefei, Anhui, 230009, PR China)
,
Guo Huier
(School of Physics, Hefei University of Technology, Hefei, Anhui, 230009, PR China)
,
Xia Yu
(School of Microelectronics, Micro Electromechanical System Research Center of Engineering and Technology of Anhui Province, Hefei University of Technology, Hefei, Anhui, 230009, PR China)
,
Yu Yongqiang
(School of Microelectronics, Micro Electromechanical System Research Center of Engineering and Technology of Anhui Province, Hefei University of Technology, Hefei, Anhui, 230009, PR China)
,
Zhou Ru
(School of Electrical Engineering and Automation, Hefei University of Technology, Hefei, Anhui, 230009, PR China)
,
Niu Haihong
(School of Electrical Engineering and Automation, Hefei University of Technology, Hefei, Anhui, 230009, PR China)
,
Mao Xiaoli
(School of Physics, Hefei University of Technology, Hefei, Anhui, 230009, PR China)
,
Wan Lei
(School of Electrical Engineering and Automation, Hefei University of Technology, Hefei, Anhui, 230009, PR China)
,
Xu Jinzhang
(School of Electrical Engineering and Automation, Hefei University of Technology, Hefei, Anhui, 230009, PR China)
資料名:
Materials Science in Semiconductor Processing
(Materials Science in Semiconductor Processing)
巻:
138
ページ:
Null
発行年:
2022年
JST資料番号:
W1055A
ISSN:
1369-8001
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)