文献
J-GLOBAL ID:202202237506981201
整理番号:22A1156219
四元InAlGaN DG MOS-HEMTのアナログ/RF性能に及ぼすモル分率変動の影響【JST・京大機械翻訳】
Impact of Mole Fraction Variation on the Analog/RF Performance of Quaternary InAlGaN DG MOS-HEMTs
著者 (5件):
Ghosh Sushmita
(Department of Electronics and Communications Engineering, Heritage Institute of Technology, Kolkata, India)
,
Bagla Gautam
(Department of Electronics and Communications Engineering, Heritage Institute of Technology, Kolkata, India)
,
Mukherjee Hrit
(Department of Electronics and Telecommunication Engineering, Jadavpur University, Kolkata, India)
,
Kar Mousiki
(Department of Electronics and Communications Engineering, Heritage Institute of Technology, Kolkata, India)
,
Kundu Atanu
(Department of Electronics and Communications Engineering, Heritage Institute of Technology, Kolkata, India)
資料名:
Journal of Electronic Materials
(Journal of Electronic Materials)
巻:
51
号:
5
ページ:
2608-2616
発行年:
2022年
JST資料番号:
D0277B
ISSN:
0361-5235
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)