文献
J-GLOBAL ID:202202237915740367
整理番号:22A0396698
バイナリニューラルネットワークのためのANDアレイアーキテクチャにおけるSiO_2フィンベースフラッシュシナプスセル【JST・京大機械翻訳】
SiO2 Fin-Based Flash Synaptic Cells in AND Array Architecture for Binary Neural Networks
著者 (5件):
Lee Soochang
(Department of Electrical and Computer Engineering and the Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul, South Korea)
,
Kim Hyeongsu
(Department of Electrical and Computer Engineering and the Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul, South Korea)
,
Lee Sung-Tae
(Department of Electrical and Computer Engineering and the Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul, South Korea)
,
Park Byung-Gook
(Department of Electrical and Computer Engineering and the Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul, South Korea)
,
Lee Jong-Ho
(Department of Electrical and Computer Engineering and the Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul, South Korea)
資料名:
IEEE Electron Device Letters
(IEEE Electron Device Letters)
巻:
43
号:
1
ページ:
142-145
発行年:
2022年
JST資料番号:
B0344B
ISSN:
0741-3106
CODEN:
EDLEDZ
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)