文献
J-GLOBAL ID:202202239272222786
整理番号:22A1152203
二次元FeOCl:温度振動化学蒸気輸送により合成した高面内異方性反強磁性半導体【JST・京大機械翻訳】
2D FeOCl: A Highly In-Plane Anisotropic Antiferromagnetic Semiconductor Synthesized via Temperature-Oscillation Chemical Vapor Transport
著者 (17件):
Zeng Yi
(School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Centre for Engineering Science and Advanced Technology, Peking University, Beijing, 100871, China)
,
Gu Pingfan
(State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, China)
,
Zhao Zijing
(School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Centre for Engineering Science and Advanced Technology, Peking University, Beijing, 100871, China)
,
Zhang Biao
(School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Centre for Engineering Science and Advanced Technology, Peking University, Beijing, 100871, China)
,
Lin Zhongchong
(State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, China)
,
Peng Yuxuan
(State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, China)
,
Li Wei
(School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Centre for Engineering Science and Advanced Technology, Peking University, Beijing, 100871, China)
,
Zhao Wanting
(School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Centre for Engineering Science and Advanced Technology, Peking University, Beijing, 100871, China)
,
Leng Yuchen
(State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China)
,
Tan Pingheng
(State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China)
,
Yang Teng
(Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China)
,
Zhang Zhidong
(Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China)
,
Song Youting
(Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China)
,
Yang Jinbo
(State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, China)
,
Ye Yu
(State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, China)
,
Tian Kesong
(School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Centre for Engineering Science and Advanced Technology, Peking University, Beijing, 100871, China)
,
Hou Yanglong
(School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Centre for Engineering Science and Advanced Technology, Peking University, Beijing, 100871, China)
資料名:
Advanced Materials
(Advanced Materials)
巻:
34
号:
14
ページ:
e2108847
発行年:
2022年
JST資料番号:
W0001A
ISSN:
0935-9648
CODEN:
ADVMEW
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)