文献
J-GLOBAL ID:202202240530214552
整理番号:22A0956253
14nmノードの短チャネルFinFETデバイスにおけるフィンプロファイルによるホットキャリア劣化の異常傾向【JST・京大機械翻訳】
Abnormal trend in hot carrier degradation with fin profile in short channel FinFET devices at 14 nm node
著者 (14件):
Kuo Ting-Tzu
(Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung 804, Taiwan)
,
Chen Ying-Chung
(Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung 804, Taiwan)
,
Chang Ting-Chang
(Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan)
,
Chang Ting-Chang
(The Center of Crystal Research, National Sun Yat-Sen University, Kaohsiung 804, Taiwan)
,
Chang Kai-Chun
(Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan)
,
Yeh Chien-Hung
(The Center of Crystal Research, National Sun Yat-Sen University, Kaohsiung 804, Taiwan)
,
Ciou Fong-Min
(Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan)
,
Lin Yu-Shan
(Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan)
,
Lin Yun-Hsuan
(Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan)
,
Jin Fu-Yuan
(Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan)
,
Hung Wei-Chun
(Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan)
,
Chang Yen-Cheng
(Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan)
,
Chen Kuan-Hsu
(Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan)
,
Lin Jia-Hong
(Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan)
資料名:
Semiconductor Science and Technology
(Semiconductor Science and Technology)
巻:
37
号:
4
ページ:
045010 (6pp)
発行年:
2022年
JST資料番号:
E0503B
ISSN:
0268-1242
CODEN:
SSTEET
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)