文献
J-GLOBAL ID:202202242064274744
整理番号:22A0482541
4H-SiC NPN多層構造を有する双方向Bias応答紫外フォトトランジスタ【JST・京大機械翻訳】
Bidirectional Bias Response Ultraviolet Phototransistors With 4H-SiC NPN Multi-Layer Structure
著者 (8件):
Sun Chenyue
(School of Microelectronics, Xidian University, Xi’an, Shaanxi, China)
,
Guo Hui
(School of Microelectronics, Xidian University, Xi’an, Shaanxi, China)
,
Yuan Lei
(School of Microelectronics, Xidian University, Xi’an, Shaanxi, China)
,
Yang Haohang
(School of Microelectronics, Xidian University, Xi’an, Shaanxi, China)
,
Tang Xiaoyan
(School of Microelectronics, Xidian University, Xi’an, Shaanxi, China)
,
Zhang Yimeng
(School of Microelectronics, Xidian University, Xi’an, Shaanxi, China)
,
Song Qingwen
(School of Microelectronics, Xidian University, Xi’an, Shaanxi, China)
,
Zhang Yuming
(School of Microelectronics, Xidian University, Xi’an, Shaanxi, China)
資料名:
IEEE Photonics Technology Letters
(IEEE Photonics Technology Letters)
巻:
34
号:
2
ページ:
81-84
発行年:
2022年
JST資料番号:
T0721A
ISSN:
1041-1135
CODEN:
IPTLEL
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)