文献
J-GLOBAL ID:202202242204794498
整理番号:22A0414989
2D Bi_2Se_3の低エネルギー酸素プラズマ注入は高度に制御可能な抵抗ランダムアクセスメモリを実現する【JST・京大機械翻訳】
Low-Energy Oxygen Plasma Injection of 2D Bi2Se3 Realizes Highly Controllable Resistive Random Access Memory
著者 (17件):
Yin Chujun
(Institute of Microelectronics of Chinese Academy of Sciences, Beijing, 100029, P. R. China)
,
Yin Chujun
(University of Chinese Academy of Sciences, Beijing, 100049, P. R. China)
,
Gong Chuanhui
(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China)
,
Tian Siying
(Institute of Microelectronics of Chinese Academy of Sciences, Beijing, 100029, P. R. China)
,
Tian Siying
(University of Chinese Academy of Sciences, Beijing, 100049, P. R. China)
,
Cui Yi
(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China)
,
Wang Xuepeng
(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China)
,
Wang Yang
(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China)
,
Hu Zhenheng
(Institute of Microelectronics of Chinese Academy of Sciences, Beijing, 100029, P. R. China)
,
Hu Zhenheng
(University of Chinese Academy of Sciences, Beijing, 100049, P. R. China)
,
Huang Jianwen
(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China)
,
Wu Chunyang
(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China)
,
Chen Bo
(Institute of Microelectronics of Chinese Academy of Sciences, Beijing, 100029, P. R. China)
,
Chen Bo
(University of Chinese Academy of Sciences, Beijing, 100049, P. R. China)
,
Wang Xianfu
(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China)
,
Li Chaobo
(Institute of Microelectronics of Chinese Academy of Sciences, Beijing, 100029, P. R. China)
,
Li Chaobo
(University of Chinese Academy of Sciences, Beijing, 100049, P. R. China)
資料名:
Advanced Functional Materials
(Advanced Functional Materials)
巻:
32
号:
1
ページ:
e2108455
発行年:
2022年
JST資料番号:
W1336A
ISSN:
1616-301X
CODEN:
AFMDC6
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)