文献
J-GLOBAL ID:202202242636927349
整理番号:22A1154309
界面のすべて:高品質h-BN単分子層ペリレンジイミド界面における残留汚染物質は電荷捕獲を引き起こすか?【JST・京大機械翻訳】
All About the Interface: Do Residual Contaminants at A High-Quality h-BN Monolayer Perylene Diimide Interface Cause Charge Trapping?
著者 (8件):
Renn Lukas
(1st Institute of Physics, Faculty of Physics, Georg-August-University, Gottingen, Germany)
,
Renn Lukas
(AG Physics of Nanosystems, Faculty of Physics, Ludwig-Maximilians-University, Munich, Germany)
,
Walter Lisa S.
(1st Institute of Physics, Faculty of Physics, Georg-August-University, Gottingen, Germany)
,
Walter Lisa S.
(AG Physics of Nanosystems, Faculty of Physics, Ludwig-Maximilians-University, Munich, Germany)
,
Watanabe Kenji
(Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan)
,
Taniguchi Takashi
(International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan)
,
Weitz R. Thomas
(1st Institute of Physics, Faculty of Physics, Georg-August-University, Gottingen, Germany)
,
Weitz R. Thomas
(AG Physics of Nanosystems, Faculty of Physics, Ludwig-Maximilians-University, Munich, Germany)
資料名:
Advanced Materials Interfaces
(Advanced Materials Interfaces)
巻:
9
号:
10
ページ:
e2101701
発行年:
2022年
JST資料番号:
W2484A
ISSN:
2196-7350
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)