文献
J-GLOBAL ID:202202243094186318
整理番号:22A0982310
トップコンタクト電極の非対称化学官能化:高性能MoS_2電界効果トランジスタとSchottkyダイオードのための電荷注入の調整【JST・京大機械翻訳】
Asymmetric Chemical Functionalization of Top-Contact Electrodes: Tuning the Charge Injection for High-Performance MoS2 Field-Effect Transistors and Schottky Diodes
著者 (8件):
Han Bin
(Universite de Strasbourg, CNRS, ISIS, 8 allee Gaspard Monge, Strasbourg, 67000, France)
,
Zhao Yuda
(Universite de Strasbourg, CNRS, ISIS, 8 allee Gaspard Monge, Strasbourg, 67000, France)
,
Ma Chun
(Universite de Strasbourg, CNRS, ISIS, 8 allee Gaspard Monge, Strasbourg, 67000, France)
,
Wang Can
(Universite de Strasbourg, CNRS, ISIS, 8 allee Gaspard Monge, Strasbourg, 67000, France)
,
Tian Xinzi
(Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University & Collaborative Innovation Center of Chemical Science and Engineering, Tianjin, 300072, China)
,
Wang Ye
(Universite de Strasbourg, CNRS, ISIS, 8 allee Gaspard Monge, Strasbourg, 67000, France)
,
Hu Wenping
(Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University & Collaborative Innovation Center of Chemical Science and Engineering, Tianjin, 300072, China)
,
Samori Paolo
(Universite de Strasbourg, CNRS, ISIS, 8 allee Gaspard Monge, Strasbourg, 67000, France)
資料名:
Advanced Materials
(Advanced Materials)
巻:
34
号:
12
ページ:
e2109445
発行年:
2022年
JST資料番号:
W0001A
ISSN:
0935-9648
CODEN:
ADVMEW
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)