文献
J-GLOBAL ID:202202243430550429
整理番号:22A0327733
nc-SiO_x≧0:Hベースのトンネル再結合接合の基本動作機構【JST・京大機械翻訳】
The fundamental operation mechanisms of nc-SiOX≧0:H based tunnel recombination junctions revealed
著者 (8件):
de Vrijer Thierry
(Photovoltaic Materials and Devices, TU Delft, Mekelweg 4, Delft 2628CD, The Netherlands)
,
van Nijen David
(Photovoltaic Materials and Devices, TU Delft, Mekelweg 4, Delft 2628CD, The Netherlands)
,
Parasramka Harsh
(Photovoltaic Materials and Devices, TU Delft, Mekelweg 4, Delft 2628CD, The Netherlands)
,
Procel Moya Paul A.
(Photovoltaic Materials and Devices, TU Delft, Mekelweg 4, Delft 2628CD, The Netherlands)
,
Procel Moya Paul A.
(Instituto de Micro y Nanoelectronica, Universidad San Francisco de Quito, Diego de Robles s/n, Quito 170901, Ecuador)
,
Zhao Yifeng
(Photovoltaic Materials and Devices, TU Delft, Mekelweg 4, Delft 2628CD, The Netherlands)
,
Isabella Olindo
(Photovoltaic Materials and Devices, TU Delft, Mekelweg 4, Delft 2628CD, The Netherlands)
,
Smets Arno H.M.
(Photovoltaic Materials and Devices, TU Delft, Mekelweg 4, Delft 2628CD, The Netherlands)
資料名:
Solar Energy Materials and Solar Cells
(Solar Energy Materials and Solar Cells)
巻:
236
ページ:
Null
発行年:
2022年
JST資料番号:
D0513C
ISSN:
0927-0248
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)