文献
J-GLOBAL ID:202202243446625506
整理番号:22A1121267
高温およびトラップはAl_0.35Ga_0.65N/GaN/Al_0.25Ga_0.75N二重ヘテロ接合の特性評価【JST・京大機械翻訳】
High temperature and trap sates characterization of Al0.35Ga0.65N/GaN/Al0.25Ga0.75N double heterojunction
著者 (9件):
Zhao Shenglei
(Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China)
,
Mei Bo
(China Aerospace Components Engineering Center, Beijing 100094, China)
,
Sun Yi
(China Aerospace Components Engineering Center, Beijing 100094, China)
,
Cao Shuang
(China Aerospace Components Engineering Center, Beijing 100094, China)
,
Zhang Yachao
(Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China)
,
Zhang Yachao
(China Aerospace Components Engineering Center, Beijing 100094, China)
,
Zhu Dan
(Xi’an Institute of Space Radio Technology, Xi’an 710071, China)
,
Zhang Jincheng
(Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China)
,
Hao Yue
(Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China)
資料名:
Results in Physics
(Results in Physics)
巻:
36
ページ:
Null
発行年:
2022年
JST資料番号:
W3368A
ISSN:
2211-3797
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)