文献
J-GLOBAL ID:202202243801214714
整理番号:22A0324711
薄膜トランジスタ応用のためのIGTO薄膜の耐放射線性に及ぼすAl_2O_3表面不動態化の影響【JST・京大機械翻訳】
Effects of Al2O3 surface passivation on the radiation hardness of IGTO thin films for thin-film transistor applications
著者 (5件):
Hwang Seong-Hyun
(School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, South Korea)
,
Yatsu Kie
(School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, South Korea)
,
Lee Dong-Ho
(School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, South Korea)
,
Park Ick-Joon
(Department of Electrical and Electronic Engineering, Joongbu University, Goyang 10279, South Korea)
,
Kwon Hyuck-In
(School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, South Korea)
資料名:
Applied Surface Science
(Applied Surface Science)
巻:
578
ページ:
Null
発行年:
2022年
JST資料番号:
B0707B
ISSN:
0169-4332
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)