文献
J-GLOBAL ID:202202245132201163
整理番号:22A0956254
低EMI雑音用のP-Nドープポリシリコンスプリットゲートを持つ新しい3300VトレンチIGBT【JST・京大機械翻訳】
A novel 3300 V trench IGBT with P-N-doped polysilicon split gate for low EMI noise
著者 (10件):
Wang Tongyang
(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, People’s Republic of China)
,
Li Zehong
(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, People’s Republic of China)
,
Li Zehong
(Chongqing Institute of Microelectronics Industry Technology, University of Electronic Science and Technology of China, Chongqing, People’s Republic of China)
,
Zhao Yishang
(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, People’s Republic of China)
,
Li Luping
(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, People’s Republic of China)
,
Yang Yang
(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, People’s Republic of China)
,
Xia Ziming
(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, People’s Republic of China)
,
Ren Min
(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, People’s Republic of China)
,
Li Wei
(China Resources Microelectronics Limited, Wuxi, People’s Republic of China)
,
Zhang Jinping
(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, People’s Republic of China)
資料名:
Semiconductor Science and Technology
(Semiconductor Science and Technology)
巻:
37
号:
4
ページ:
045011 (6pp)
発行年:
2022年
JST資料番号:
E0503B
ISSN:
0268-1242
CODEN:
SSTEET
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)