文献
J-GLOBAL ID:202202245822902091
整理番号:22A0396689
高電圧シリコンオンインシュレータ横方向二重拡散MOSFETにおける高フルエンス中性子照射により誘起された出力電流のカットオフ劣化【JST・京大機械翻訳】
Cut-Off Degradation of Output Current Induced by High Fluence Neutron Radiation in High-Voltage Silicon-on-Insulator Lateral Double-Diffused MOSFET
著者 (6件):
Wang Ruidi
(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China)
,
Qiao Ming
(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China)
,
Wang Yibing
(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China)
,
Zhou Xin
(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China)
,
Li Zhaoji
(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China)
,
Zhang Bo
(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China)
資料名:
IEEE Electron Device Letters
(IEEE Electron Device Letters)
巻:
43
号:
1
ページ:
108-111
発行年:
2022年
JST資料番号:
B0344B
ISSN:
0741-3106
CODEN:
EDLEDZ
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)