文献
J-GLOBAL ID:202202246498090421
整理番号:22A1156303
オプトエレクトロニクスデバイスのための電場により調整した二次元ZrSe_2/ZrS_2ヘテロ二重層【JST・京大機械翻訳】
Two-dimensional ZrSe2/ZrS2 heterobilayer tuned by electric field for optoelectronic devices
著者 (11件):
Zhang L. M.
(School of Physics and Electronics Engineering, Zhengzhou University of Light Industry, Zhengzhou, China)
,
Zhang L. M.
(Henan Key Laboratory of Magnetoelectronic Information Functional Materials, Zhengzhou, China)
,
Zhang W. B.
(School of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou, China)
,
Qiao S.
(School of Physics and Electronics Engineering, Zhengzhou University of Light Industry, Zhengzhou, China)
,
Qiao S.
(Henan Key Laboratory of Magnetoelectronic Information Functional Materials, Zhengzhou, China)
,
Yang Y.
(School of Physics and Electronics Engineering, Zhengzhou University of Light Industry, Zhengzhou, China)
,
Yang Y.
(Henan Key Laboratory of Magnetoelectronic Information Functional Materials, Zhengzhou, China)
,
Shang J. M.
(School of Physics and Electronics Engineering, Zhengzhou University of Light Industry, Zhengzhou, China)
,
Shang J. M.
(Henan Key Laboratory of Magnetoelectronic Information Functional Materials, Zhengzhou, China)
,
Feng S. Q.
(School of Physics and Electronics Engineering, Zhengzhou University of Light Industry, Zhengzhou, China)
,
Feng S. Q.
(Henan Key Laboratory of Magnetoelectronic Information Functional Materials, Zhengzhou, China)
資料名:
Journal of the Korean Physical Society
(Journal of the Korean Physical Society)
巻:
80
号:
7
ページ:
606-612
発行年:
2022年
JST資料番号:
T0357A
ISSN:
0374-4884
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)