文献
J-GLOBAL ID:202202246594025613
整理番号:22A0396674
ハードマスク定義およびドライエッチパターン形成有機TFTデバイスにおけるゲート誘電漏れ低減【JST・京大機械翻訳】
Gate Dielectric Leakage Reduction in Hard-Mask Defined and Dry-Etch Patterned Organic TFTs Devices
著者 (9件):
Chen Jian-Jie
(Department of Physics, National Sun Yat-sen University, Kaohsiung, Taiwan)
,
Chang Ting-Chang
(Department of Physics and the Center of Crystal Research, National Sun Yat-sen University, Kaohsiung, Taiwan)
,
Hung Yang-Hao
(Department of Physics, National Sun Yat-sen University, Kaohsiung, Taiwan)
,
Zheng Yu-Zhe
(Department of Materials and Optoelectronic Science, National Sun Yat-sen University, Kaohsiung, Taiwan)
,
Kuo Chuan-Wei
(Department of Materials and Optoelectronic Science, National Sun Yat-sen University, Kaohsiung, Taiwan)
,
Lin Shih-Kai
(Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, Taiwan)
,
Wu Pei-Yu
(Department of Materials and Optoelectronic Science, National Sun Yat-sen University, Kaohsiung, Taiwan)
,
Tsai Chia-Hung
(SmartKem Inc., Manchester Technology Centre, Manchester, U.K.)
,
Ogier Simon
(SmartKem Inc., Manchester Technology Centre, Manchester, U.K.)
資料名:
IEEE Electron Device Letters
(IEEE Electron Device Letters)
巻:
43
号:
1
ページ:
48-51
発行年:
2022年
JST資料番号:
B0344B
ISSN:
0741-3106
CODEN:
EDLEDZ
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)