文献
J-GLOBAL ID:202202249030845078
整理番号:22A1063902
非常に高い利得と高い帯域幅を提供するQFGMOSベースgmブーストおよび適応バイアス2段増幅器【JST・京大機械翻訳】
A QFGMOS-Based gm-Boosted and Adaptively Biased Two-Stage Amplifier Offering Very High Gain and High Bandwidth
著者 (6件):
Bansal Urvashi
(ECE Department, Netaji Subhas University of Technology, New Delhi 110078, India)
,
Bakre Abhilasha
(ECE Department, Netaji Subhas University of Technology, New Delhi 110078, India)
,
Kumar Prem
(ECE Department, Netaji Subhas University of Technology, New Delhi 110078, India)
,
Yadav Devansh
(ECE Department, Netaji Subhas University of Technology, New Delhi 110078, India)
,
Kumar Mohit
(ECE Department, Netaji Subhas University of Technology, New Delhi 110078, India)
,
Raj Niranjan
(ECE Department, Netaji Subhas University of Technology, New Delhi 110078, India)
資料名:
Journal of Circuits, Systems, and Computers
(Journal of Circuits, Systems, and Computers)
巻:
31
号:
3
ページ:
2250056
発行年:
2022年
JST資料番号:
W0526A
ISSN:
0218-1266
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
シンガポール (SGP)
言語:
英語 (EN)