文献
J-GLOBAL ID:202202249093636579
整理番号:22A0388716
Cドープp-GaN HEMTにおける動的R_ON過渡現象に及ぼすPoole-Frenkel効果の実験的および数値的研究【JST・京大機械翻訳】
Experimental and numerical investigation of Poole-Frenkel effect on dynamic RON transients in C-doped p-GaN HEMTs
著者 (6件):
Zagni Nicolo
(Department of Engineering ‘Enzo Ferrari’, University of Modena and Reggio Emilia, via P. Vivarelli 10, 41125 Modena, Italy)
,
Cioni Marcello
(Department of Engineering ‘Enzo Ferrari’, University of Modena and Reggio Emilia, via P. Vivarelli 10, 41125 Modena, Italy)
,
Iucolano Ferdinando
(STMicroelectronics, Strada Primosole 50, 95121 Catania, Italy)
,
Moschetti Maurizio
(STMicroelectronics, Strada Primosole 50, 95121 Catania, Italy)
,
Verzellesi Giovanni
(Department of Sciences and Methods for Engineering (DISMI) and EN&TECH Center, University of Modena and Reggio Emilia, via G. Amendola, 2, 42122 Reggio Emilia, Italy)
,
Chini Alessandro
(Department of Engineering ‘Enzo Ferrari’, University of Modena and Reggio Emilia, via P. Vivarelli 10, 41125 Modena, Italy)
資料名:
Semiconductor Science and Technology
(Semiconductor Science and Technology)
巻:
37
号:
2
ページ:
025006 (5pp)
発行年:
2022年
JST資料番号:
E0503B
ISSN:
0268-1242
CODEN:
SSTEET
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)