文献
J-GLOBAL ID:202202252443240417
整理番号:22A0478214
ホウ素ドープ{113}配向ホモエピタキシャルダイヤモンド層上の低抵抗Ohm接触【JST・京大機械翻訳】
Low-resistance ohmic contacts on boron-doped {113} oriented homoepitaxial diamond layers
著者 (10件):
Hazdra P.
(Czech Technical University in Prague, Faculty of Electrical Engineering, Technicka 1902/2, 166 27 Prague 6, Czech Republic)
,
Laposa A.
(Czech Technical University in Prague, Faculty of Electrical Engineering, Technicka 1902/2, 166 27 Prague 6, Czech Republic)
,
Soban Z.
(Institute of Physics of the Czech Academy of Sciences, Na Slovance 1999/2, 182 21 Prague 8, Czech Republic)
,
Voves J.
(Czech Technical University in Prague, Faculty of Electrical Engineering, Technicka 1902/2, 166 27 Prague 6, Czech Republic)
,
Lambert N.
(Institute of Physics of the Czech Academy of Sciences, Na Slovance 1999/2, 182 21 Prague 8, Czech Republic)
,
Davydova M.
(Institute of Physics of the Czech Academy of Sciences, Na Slovance 1999/2, 182 21 Prague 8, Czech Republic)
,
Povolny V.
(Czech Technical University in Prague, Faculty of Electrical Engineering, Technicka 1902/2, 166 27 Prague 6, Czech Republic)
,
Taylor A.
(Institute of Physics of the Czech Academy of Sciences, Na Slovance 1999/2, 182 21 Prague 8, Czech Republic)
,
Mortet V.
(Institute of Physics of the Czech Academy of Sciences, Na Slovance 1999/2, 182 21 Prague 8, Czech Republic)
,
Mortet V.
(Czech Technical University in Prague, Faculty of Biomedical Engineering, Sitna 3105, 272 01 Kladno, Czech Republic)
資料名:
Diamond and Related Materials
(Diamond and Related Materials)
巻:
121
ページ:
Null
発行年:
2022年
JST資料番号:
W0498A
ISSN:
0925-9635
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)