文献
J-GLOBAL ID:202202253886148859
整理番号:22A0954419
原子論的シミュレーションおよび理論的解析による単結晶シリコンのナノインデンテーションにおける亀裂進展の機構【JST・京大機械翻訳】
Mechanism of crack evolution in nano-indentation of single crystal silicon by atomistic simulations and theoretical analysis
著者 (5件):
Zhou Yuqi
(College of Mechanical Engineering, Guizhou University, Guiyang, China)
,
Dai Houfu
(College of Mechanical Engineering, Guizhou University, Guiyang, China)
,
Dai Houfu
(Key Laboratory of Advanced Manufacturing Technology, Ministry of Education, Guizhou University, Guiyang, China)
,
Dai Houfu
(State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, Hunan University, Changsha, China)
,
Li Ping
(State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, Hunan University, Changsha, China)
資料名:
Proceedings of the Institution of Mechanical Engineers. Part C. Journal of Mechanical Engineering Science
(Proceedings of the Institution of Mechanical Engineers. Part C. Journal of Mechanical Engineering Science)
巻:
236
号:
2
ページ:
997-1008
発行年:
2022年
JST資料番号:
H0720A
ISSN:
0954-4062
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)