文献
J-GLOBAL ID:202202254439029984
整理番号:22A0492406
神経形態計算のための良好な保持を持つ電解質ゲートトランジスタ【JST・京大機械翻訳】
Electrolyte-gated transistors with good retention for neuromorphic computing
著者 (8件):
Li Yue
(Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China)
,
Xu Han
(Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China)
,
Lu Jikai
(Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China)
,
Wu Zuheng
(Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China)
,
Wu Shuyu
(Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China)
,
Zhang Xumeng
(Frontier Institute of Chip and System, Fudan University, Shanghai 200433, China)
,
Liu Qi
(Frontier Institute of Chip and System, Fudan University, Shanghai 200433, China)
,
Shang Dashan
(Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
120
号:
2
ページ:
021901-021901-5
発行年:
2022年
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)