文献
J-GLOBAL ID:202202256085156256
整理番号:22A1156183
歪と欠陥エンジニアリングによるJanus GaInSeTeナノシートの調整可能な電子および磁気特性に関する第一原理研究【JST・京大機械翻訳】
First-Principles Study on the Tunable Electronic and Magnetic Properties of a Janus GaInSeTe Nanosheet via Strain and Defect Engineering
著者 (7件):
Chen Tong
(Energy Materials Computing Center, School of Energy and Mechanical Engineering, Jiangxi University of Science and Technology, Nanchang, China)
,
Chen Tong
(Department of Physics, Key Laboratory for Low-Dimensional Structures and Quantum Manipulation (Ministry of Education), and Synergetic Innovation Center for Quantum Effects and Applications of Hunan, Hunan Normal University, Changsha, China)
,
Liu Guogang
(Energy Materials Computing Center, School of Energy and Mechanical Engineering, Jiangxi University of Science and Technology, Nanchang, China)
,
Dong Xiansheng
(Energy Materials Computing Center, School of Energy and Mechanical Engineering, Jiangxi University of Science and Technology, Nanchang, China)
,
Li Huili
(Department of Physics, Key Laboratory for Low-Dimensional Structures and Quantum Manipulation (Ministry of Education), and Synergetic Innovation Center for Quantum Effects and Applications of Hunan, Hunan Normal University, Changsha, China)
,
Li Huili
(School of Computer Science, Jiangxi University of Traditional Chinese Medicine, Nanchang, China)
,
Zhou Guanghui
(Department of Physics, Key Laboratory for Low-Dimensional Structures and Quantum Manipulation (Ministry of Education), and Synergetic Innovation Center for Quantum Effects and Applications of Hunan, Hunan Normal University, Changsha, China)
資料名:
Journal of Electronic Materials
(Journal of Electronic Materials)
巻:
51
号:
5
ページ:
2212-2220
発行年:
2022年
JST資料番号:
D0277B
ISSN:
0361-5235
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)