文献
J-GLOBAL ID:202202259662886685
整理番号:22A0492431
優先結晶方位を有する高性能SnSe_2熱電薄膜の作製【JST・京大機械翻訳】
Fabrication of high-performance SnSe2 thermoelectric thin films with preferred crystallographic orientation
著者 (4件):
Heo Seung Hwae
(Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, South Korea)
,
Baek Seongheon
(Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, South Korea)
,
Shin Tae Joo
(Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, South Korea)
,
Son Jae Sung
(Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, South Korea)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
120
号:
2
ページ:
023901-023901-7
発行年:
2022年
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)